tantalum pentoxide

Determination of 13 Trace Impurities in High-Purity Tantalum Pentoxide by ICP-AES

ICP-AES测定高纯氧化钽中13种杂质元素

Tantalum Pentoxide ( Ta2O5) films were prepared by pulsed DC reactive magnetron sputtering method.

采用直流脉冲反应磁控溅射方法制备了高介电常数五氧化二钽（Ta2O5）薄膜。

Growth of Tantalum Pentoxide Films and Its Current Voltage Characteristics

五氧化二钽薄膜的制备及其I-U特性

The mechanism study of carbon reduction process of tantalum pentoxide

五氧化二钽碳还原过程的机理研究

XPS Analysis of Tantalum Pentoxide Thin Films Formed by Using Excimer UV Lamp

Excimer紫外灯辐照法钽氧化物膜XPS分析

By using a two-stage carbon reduction process, Cr~ ( 6+) may be effectively reduced to Cr~ ( 3+) or even metallic Cr. THE MECHANISM STUDY OF CARBON REDUCTION PROCESS OF TANTALUM PENTOXIDE

利用C和CO的还原性，能有效地将Cr6+还原成Cr3+或者金属Cr.五氧化二钽碳还原过程的机理研究

Pretreatment Method for the Determination of Trace Fluoride, Chloride and Sulfate in Tantalum Pentoxide and Columbium Pentoxide by Ion Chromatography

离子色谱法测定五氧化二铌和五氧化二钽中痕量氟氯和硫酸根离子的前处理方法

A method in which the matrix was matched to calibration curve has been proposed for the direct determination of 13 trace impurities in high-purity tantalum pentoxide by ICP-AES.

本文提出了基体匹配校准曲线，ICP-AES法直接测定高纯氧化钽中13种杂质元素的分析方法，并考察了光谱干扰以及基体效应的影响，确定了仪器最佳工作条件。